Abd. Wahidin Nuayi
Jenis Penelitian
Insentif Jurnal Internasional (PNBP)
Sumber Dana
Enhancement of photon absorption on BaxSr1-xTiO3 (BST) thin films semiconductor for mole fraction x = 0.25, 0.35, 0.45 and 0.55 using one dimensional photonic crystal with defect were investigated. BST thin films were grown on transparent conductive oxide (TCO) substrate using chemical solution deposition (CSD) method and annealed at 500 0C for 15 hours with increasing rate of 1.6 0C/min. From optical characterizations in visible spectrum it was found that the average absorption percentages are 92.04%, 83.55%, 91.16% and 80.12%, respectively. BST thin film with embedded photonic crystal exhibited significant enhancement on photon absorption, with increasing value of 3.96%, 7.07%, 3.04%, 13.33% for the respective mole fraction and exhibiting absorbance characteristics with flat feature. Furthemore, for x = 0.55, the orange spectrum region has the largest absorbance (37.71%), followed by yellow (33.53%), purple (17.85%), red (12.32%), blue (11.24%) and green (9.96%) spectrums. In addition, we also discuss its properties of attenuation constant and electrical conductivity.